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Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes - Synthesis Lectures on Emerging Engineering Technologies
Nabil Shovon Ashraf
Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes - Synthesis Lectures on Emerging Engineering Technologies
Nabil Shovon Ashraf
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy.
Mídia | Livros Hardcover Book (Livro com lombada e capa dura) |
Lançado | 27 de março de 2025 |
ISBN13 | 9783031842856 |
Editoras | Springer International Publishing AG |
Páginas | 129 |
Dimensões | 472 g |
Idioma | German |
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